shaanxi qunli electric co., ltd add.:no. 1 qunli road,baoji city,shaanxi,china contact:jiandong lei tel.:+86-917-6293906 fax:+86-917-6297928 sxqlljd@hotmail.com 235 features: 1. using epitaxy planar technology structure. high working frequency. metallic packaging. 2. small volume, light weight, easy installation. 3. use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. quality class: gs, g. implementation of standards: qzj840611 technical data: (ta = 25 c ) specifications 3dg100 3DG102 parameter name symbols unit a b c d a b c d total dissipation p tot mw 100 (ta=25 c) 100 (ta=25 c) max. collector current i cm ma 20 20 junction temperature t jm c 175 storage temperature t stg c -55~+175 30 40 30 40 30 40 30 40 c-b breakdown voltage v (br)cbo v i c =0.1ma 20 30 20 30 15 20 20 30 c-e breakdown voltage v (br)ceo v i c =0.1ma e-b breakdown voltage v (br)ebo v 4 (i e =0.1 ma ) c- emitter saturation voltage drop v ce(sat) v 1.0 (i c =10ma, i b =1ma) 0.35 (i c =10ma, i b =1ma) b- e saturation voltage drop v be(sat) v 1.0 (i c =10ma, i b =1ma) 1.0 (i c =10ma, i b =1ma) c-b leakage current i cbo ua 0.01 (v cb =10v) 0.01 (v cb =10v) c-e leakage current i ceo ua 0.01 (v ce =10v) 0.01 (v ce =10v) e-b leakage current i ebo ua 0.01 (v eb =1.5v) 0.01 (v eb =1.5v) dc current gain h fe 25~270 (v ce =10v, i c =3ma) 150 150 300 300 150 150 700 700 transition frequency f t mhz v ce =10v, i c =3ma, f=100 mhz v ce =10v, i c =3ma, f=100 mhz h fe colored: color orange yellow green blue purple gray h fe 25~40 40~55 55~80 80~120 120~180 180~270 outline and dimensions: 3dg100, 3DG102 npn silicon high frequency low power transistor
|
